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HiPerFET TM
V DSS
I D25
R DS(on)
Power MOSFETs
IXFN 200 N06
IXFN 200 N07
60 V
70 V
200 A
200 A
6
6
m ?
m ?
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t rr
t rr ≤ 250 ns
Symbol
Test Conditions
Maximum Ratings
miniBLOC, SOT-227 B (IXFN)
n
i s g
e
D
w
e
N
r
o
F
t
o
N
V DSS
V DGR
V GS
V GSM
I D25
I L(RMS)
I DM
I AR
E AR
E AS
dv/dt
P D
T J
T JM
T stg
V ISOL
M d
T J = 25 ° C to 150 ° C N07 70 V
T J = 25 ° C to 150 ° C; R GS = 1 M ? N06 60 V
T C = 25 ° C; Chip capability 200N06/200N07 200 A
Terminal current limit 100 A
T C = 25 ° C, pulse width limited by T JM 600 A
T C = 25 ° C 100 A
T C = 25 ° C 30 mJ
T C = 25 ° C 2 J
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS , 5 V/ns
T J ≤ 150 ° C, R G = 2 ?
T C = 25 ° C 520 W
50/60 Hz, RMS t = 1 min - 2500 V~
I ISOL ≤ 1 mA t=1s - 3000 V~
Mounting torque 1.5/13 Nm/lb.in.
Terminal connection torque - 1.5/13 Nm/lb.in.
Continuous ± 20 V
Transient ± 30 V
-55 ... +150 ° C
150 ° C
-55 ... +150 ° C
E153432
S
G
S
D
G = Gate D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
International standard packages
miniBLOC with Aluminium nitride
isolation
Low R DS (on) HDMOS TM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Weight
30
g
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
V DSS
V GS = 0 V, I D = 1 mA
N06
N07
60
70
V
V
DC choppers
Temperature and lighting controls
V GS (th)
V DS = V GS , I D = 8 mA
2
4
V
Low voltage relays
I GSS
I DSS
R DS(on)
V GS = ± 20 V DC , V DS = 0
V DS = 0.8 ? V DSS T J = 25 ° C
V GS = 0 V T J = 125 ° C
V GS = 10 V, I D = 0.5 ? I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
2
± 200 nA
400 μ A
mA
6 m ?
Advantages
Easy to mount
Space savings
High power density
? 2003 IXYS All rights reserved
DS97533B(02/03)
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相关代理商/技术参数
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IXFN20N120 功能描述:MOSFET 20 Amps 1200 V 0.75 Ohms Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFN20N120P 功能描述:MOSFET 20 Amps 1200V 0.6 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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IXFN210N30P3 功能描述:MOSFET N-Channel: Power MOSFET w/Fast Diode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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IXFN21N100Q 功能描述:MOSFET 21 Amps 1000V 0.5 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFN22N120 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFET Power MOSFETs